From owner-chemistry@ccl.net Tue Nov 15 13:44:01 2011 From: "DIEGOI GOMEZ darkego21##yahoo.com" To: CCL Subject: CCL: GCMC isotherms Message-Id: <-45882-111115134117-6052-Q1WoRvx8roKuIT6SYPEZLQ__server.ccl.net> X-Original-From: DIEGOI GOMEZ Content-Type: multipart/alternative; boundary="-2120348780-1315795598-1321382466=:49058" Date: Tue, 15 Nov 2011 18:41:06 +0000 (GMT) MIME-Version: 1.0 Sent to CCL by: DIEGOI GOMEZ [darkego21[#]yahoo.com] ---2120348780-1315795598-1321382466=:49058 Content-Type: text/plain; charset=iso-8859-1 Content-Transfer-Encoding: quoted-printable Hello...=0A=0AI am new in MC simulations, therefore any answer at any level= is welcome!!=0AI want to perform GCMC simulations to compute an adsorption= isotherm of a gas in a microporous material employing a particular force f= ield (FF) derived from QM calculations.=0A=0ATo perform the simulations, I'= m testing GULP and Towhee. (Any other suggestion for an open source softwar= e would be nice!)=0A=0AWith GULP you can perform a GCMC simulation easily. = However, you need a value for the chemical potential (at a given pressure) = and here is my first question.=0A=0Ai. =BFHow to obtain efficiently and acc= urately the chemical potential value for a given pressure to start the GCMC= calculation?=0A=0AIn this regard, it is possible to obtain the chemical po= tential from a 'NPT' MC simulation that I could=A0perform=A0in Towhee. Howe= ver I would like to know if (and to skip the format of the FF for Towhee) = =A0:=A0=0A=0Aii. =BFIt is possible to perform a 'NPT' MC simulation with GU= LP?=0A=0AAny manual, reference, comment or suggestion is welcome!!=0A=0A=0A= Thanks in advance for any reply!=0A=0ADiego G=F3mez ---2120348780-1315795598-1321382466=:49058 Content-Type: text/html; charset=iso-8859-1 Content-Transfer-Encoding: quoted-printable
Hello...

I am = new in MC simulations, therefore any answer at any level is welcome!!
=
I want to perform GCMC simulations to compute an adsorption isotherm of a = gas in a microporous material employing a particular force field (FF) deriv= ed from QM calculations.

To perform the simulations, I'm t= esting GULP and Towhee. (Any other suggestion for an open source software w= ould be nice!)

With GULP you can perform a GCMC simulation easily= . However, you need a value for the chemical potential (at a given pressure= ) and here is my first question.

i. =BFHow to obtain effic= iently and accurately the chemical potential value for a given pressure to = start the GCMC calculation?

In this regard, it is possible to obtain the chemical pot= ential from a 'NPT' MC simulation that I could perform in Towhee. However I would like to= know if (and to skip the format of the FF for Towhee)  : 
<= br>
ii. =BFIt is possible to perform a 'NPT' MC simulation with GULP?=

Any manual, reference, comment or suggestion is welcome!!=

Thanks in advance for any reply!

Die= go G=F3mez






---2120348780-1315795598-1321382466=:49058-- From owner-chemistry@ccl.net Tue Nov 15 15:05:00 2011 From: "Erik D az enterdiceck_-_hotmail.com" To: CCL Subject: CCL: ONIOM input Message-Id: <-45883-111115141336-1891-Bd2DHL1fOH6k+PZqbdHWNw/./server.ccl.net> X-Original-From: "Erik D az" Date: Tue, 15 Nov 2011 14:13:34 -0500 Sent to CCL by: "Erik D az" [enterdiceck(-)hotmail.com] Hello! I have a question about ONIOM inputs... I write this lines (I work with Cisplatin derivates): %chk=oniomprueba %mem=512MB %nproc=8 # opt=maxcycle=256 oniom(pbepbe/gen:pbepbe/3-21G) scf=qc geom=connectivity pseudo=read oniomprueba 0 1 0 1 0 1 molecule specification Pt 0 SDD **** 1 3 4 5 6 7 8 9 10 11 0 6-31G(d,p) **** Pt 0 SDD The message in the output file is the next: ONIOM: Cut between C /H 7 and N 1 factor= 0.700189 0.700189 ONIOM: saving gridpoint 17 ONIOM: restoring gridpoint 3 on chk file. ONIOM: generating point 3 -- low level on real system. Standard basis: 3-21G (6D, 7F) 3-21G basis sets are only available up to Xe. Error termination via Lnk1e in /home//g09/l301.exe My question is, how i can solve this problem and have a normal termination? Thanks! Att: Erik Daz From owner-chemistry@ccl.net Tue Nov 15 15:40:01 2011 From: "Alavi, Saman Saman.Alavi^^nrc-cnrc.gc.ca" To: CCL Subject: CCL: GCMC isotherms Message-Id: <-45884-111115151320-2972-lY+UN+v0h1JSF8h7NCmWAA..server.ccl.net> X-Original-From: "Alavi, Saman" Content-Language: en-CA Content-Type: multipart/alternative; boundary="_000_001A8CD833A9894A8AED786976F900240BA27BD501NRCCENMB1nrcc_" Date: Tue, 15 Nov 2011 12:13:07 -0800 MIME-Version: 1.0 Sent to CCL by: "Alavi, Saman" [Saman.Alavi{:}nrc-cnrc.gc.ca] --_000_001A8CD833A9894A8AED786976F900240BA27BD501NRCCENMB1nrcc_ Content-Type: text/plain; charset="iso-8859-1" Content-Transfer-Encoding: quoted-printable Hello Diego, As a first approximation, you can assume the gas is ideal. In this case, th= e activity / fugacity will be the same as the pressure and you can use the = standard ideal gas relation for the chemical potential. So at this level of= approximation, no addition simulation is necessary. If you are dealing with adsorption under high pressure, low temperature con= ditions where the pressure of the gas deviates significantly from the idea = gas prediction, additional calculations will be required to calculate devia= tion from non-ideality. From these you can then calculate the fugacity and = chemical potential. You would need a NPT MC or MD calculation to calculate = the real gas density at the T and P of interest, and from this data, calcul= ate the fugacity and from that the chemical potential. This calculation wou= ld have to be repeated for each pressure of the isotherm because the deviat= ion from ideality depends on the pressure and temperature. Hope this helps! Saman ________________________________ > From: owner-chemistry+saman.alavi=3D=3Dnrc.ca!^!ccl.net [owner-chemistry+sama= n.alavi=3D=3Dnrc.ca!^!ccl.net] On Behalf Of DIEGOI GOMEZ darkego21##yahoo.com= [owner-chemistry!^!ccl.net] Sent: November 15, 2011 1:41 PM To: Alavi, Saman Subject: CCL: GCMC isotherms Hello... I am new in MC simulations, therefore any answer at any level is welcome!! I want to perform GCMC simulations to compute an adsorption isotherm of a g= as in a microporous material employing a particular force field (FF) derive= d from QM calculations. To perform the simulations, I'm testing GULP and Towhee. (Any other suggest= ion for an open source software would be nice!) With GULP you can perform a GCMC simulation easily. However, you need a val= ue for the chemical potential (at a given pressure) and here is my first qu= estion. i. =BFHow to obtain efficiently and accurately the chemical potential value= for a given pressure to start the GCMC calculation? In this regard, it is possible to obtain the chemical potential from a 'NPT= ' MC simulation that I could perform in Towhee. However I would like to kno= w if (and to skip the format of the FF for Towhee) : ii. =BFIt is possible to perform a 'NPT' MC simulation with GULP? Any manual, reference, comment or suggestion is welcome!! Thanks in advance for any reply! Diego G=F3mez --_000_001A8CD833A9894A8AED786976F900240BA27BD501NRCCENMB1nrcc_ Content-Type: text/html; charset="iso-8859-1" Content-Transfer-Encoding: quoted-printable
Hello Diego,
 
As a first approximation, you can assume the gas= is ideal. In this case, the activity / fugacity will be the same as the pr= essure and you can use the standard ideal gas relation for the chemical pot= ential. So at this level of approximation, no addition simulation is necessary.
 
If you are dealing with adsorption under high pr= essure, low temperature conditions where the pressure of the gas deviates s= ignificantly from the idea gas prediction, additional calculations will be = required to calculate deviation from non-ideality. From these you can then calculate the fugacity a= nd chemical potential. You would need a NPT MC or MD calcu= lation to calculate the real gas density at the T and P of intere= st, and from this data, calculate the fugacity and from that the chemical potential. This calculation would have to be repeated fo= r each pressure of the isotherm because the deviation from ideality= depends on the pressure and temperature.
 
Hope this helps!
Saman=  
 

From: owner-chemi= stry+saman.alavi=3D=3Dnrc.ca!^!ccl.net [owner-chemistry+saman.alavi= =3D=3Dnrc.ca!^!ccl.net] On Behalf Of DIEGOI GOMEZ darkego21##yahoo.com [owner= -chemistry!^!ccl.net]
Sent: November 15, 2011 1:41 PM
To: Alavi, Saman
Subject: CCL: GCMC isotherms

Hel= lo...
I a= m new in MC simulations, therefore any answer at any level is welcome!!
I w= ant to perform GCMC simulations to compute an adsorption isotherm of a gas = in a microporous material employing a particular force field (FF) derived f= rom QM calculations.
To = perform the simulations, I'm testing GULP and Towhee. (Any other suggestion= for an open source software would be nice!)
Wit= h GULP you can perform a GCMC simulation easily. However, you need a value = for the chemical potential (at a given pressure) and here is my first quest= ion.
i. = =BFHow to obtain efficiently and accurately the chemical potential value fo= r a given pressure to start the GCMC calculation?
In this regard, it is poss= ible to obtain the chemical potential from a 'NPT' MC simulation that I cou= ld perform in = Towhee. However I would like to know if (and to skip the format of the FF for Towhee)  : 
ii.= =BFIt is possible to perform a 'NPT' MC simulation with GULP?
Any= manual, reference, comment or suggestion is welcome!!
Tha= nks in advance for any reply!
Die= go G=F3mez



--_000_001A8CD833A9894A8AED786976F900240BA27BD501NRCCENMB1nrcc_-- From owner-chemistry@ccl.net Tue Nov 15 17:01:00 2011 From: "=?utf-8?B?U3rFkXJpIE1pbMOhbg==?= milan,,jgypk.u-szeged.hu" To: CCL Subject: CCL: GCMC isotherms Message-Id: <-45885-111115165850-9220-D4z/dw1pa13hMvD2mSeCAA:+:server.ccl.net> X-Original-From: =?utf-8?B?U3rFkXJpIE1pbMOhbg==?= Content-Type: multipart/alternative; boundary="----=_NextPart_000_0128_01CCA3EA.2E494410" Date: Tue, 15 Nov 2011 22:59:08 +0100 MIME-Version: 1.0 Sent to CCL by: =?utf-8?B?U3rFkXJpIE1pbMOhbg==?= [milan---jgypk.u-szeged.hu] Ez egy tvbbriszes |zenet MIME-formatumban. ------=_NextPart_000_0128_01CCA3EA.2E494410 Content-Type: text/plain; charset="utf-8" Content-Transfer-Encoding: quoted-printable Hi Diego, I can recommend to use Mezei=E2=80=99s MMC code = (http://inka.mssm.edu/~mezei/mmc/). In GCMC, the chemical potential, = volume and temperature are constant and relative pressure (i.e. the = pressure of the vapour phase normalized by the pressure of the saturated = vapour) can be given by the actual chemical potential and the chemical = potential corresponding to the point of condensation. In order to get = adsorption isotherm (and find the point of condensation) you should run = a series of simulations varying the chemical potentials systematically = (pay attention for hysteresis in the case of microporous material). To = do the math, all the necessary formula can be found in = Phys.Chem.Chem.Phys., 2010, 12, 4604=E2=80=934616. Good luck!=20 Mil=C3=A1n > From: Alavi, Saman Saman.Alavi^^nrc-cnrc.gc.ca=20 Sent: Tuesday, November 15, 2011 9:13 PM To: Szori, Milan =20 Subject: CCL: GCMC isotherms Hello Diego, As a first approximation, you can assume the gas is ideal. In this case, = the activity / fugacity will be the same as the pressure and you can use = the standard ideal gas relation for the chemical potential. So at this = level of approximation, no addition simulation is necessary. If you are dealing with adsorption under high pressure, low temperature = conditions where the pressure of the gas deviates significantly from the = idea gas prediction, additional calculations will be required to = calculate deviation from non-ideality. From these you can then calculate = the fugacity and chemical potential. You would need a NPT MC or MD = calculation to calculate the real gas density at the T and P of = interest, and from this data, calculate the fugacity and from that the = chemical potential. This calculation would have to be repeated for each = pressure of the isotherm because the deviation from ideality depends on = the pressure and temperature.=20 Hope this helps! Saman=20 -------------------------------------------------------------------------= ------- > From: owner-chemistry+saman.alavi=3D=3Dnrc.ca*_*ccl.net = [owner-chemistry+saman.alavi=3D=3Dnrc.ca*_*ccl.net] On Behalf Of DIEGOI = GOMEZ darkego21##yahoo.com [owner-chemistry*_*ccl.net] Sent: November 15, 2011 1:41 PM To: Alavi, Saman Subject: CCL: GCMC isotherms Hello... I am new in MC simulations, therefore any answer at any level is = welcome!! I want to perform GCMC simulations to compute an adsorption isotherm of = a gas in a microporous material employing a particular force field (FF) = derived from QM calculations. To perform the simulations, I'm testing GULP and Towhee. (Any other = suggestion for an open source software would be nice!) With GULP you can perform a GCMC simulation easily. However, you need a = value for the chemical potential (at a given pressure) and here is my = first question. i. =C2=BFHow to obtain efficiently and accurately the chemical potential = value for a given pressure to start the GCMC calculation? In this regard, it is possible to obtain the chemical potential from a = 'NPT' MC simulation that I could perform in Towhee. However I would like = to know if (and to skip the format of the FF for Towhee) :=20 ii. =C2=BFIt is possible to perform a 'NPT' MC simulation with GULP? Any manual, reference, comment or suggestion is welcome!! Thanks in advance for any reply! Diego G=C3=B3mez ------=_NextPart_000_0128_01CCA3EA.2E494410 Content-Type: text/html; charset="utf-8" Content-Transfer-Encoding: quoted-printable
Hi Diego,
 
I can recommend to use Mezei=E2=80=99s MMC code (http://inka.mssm.edu/~mezei/mmc/). = In GCMC,=20 the chemical potential, volume and temperature are constant and relative = pressure (i.e. the pressure of the vapour phase normalized by the = pressure of=20 the saturated vapour) can be given by the actual chemical potential and = the=20 chemical potential corresponding to the point of condensation. In order = to get=20 adsorption isotherm (and find the point of condensation) you should run = a series=20 of simulations varying the chemical potentials systematically (pay = attention for=20 hysteresis in the case of microporous material). To do the math, all the = necessary formula can be found in Phys.Chem.Chem.Phys., 2010, 12,=20 4604=E2=80=934616.
 
Good luck!
Mil=C3=A1n
 
 
Sent: Tuesday, November 15, 2011 9:13 PM
Subject: CCL: GCMC isotherms
 
Hello Diego,
 
As a first approximation, you can assume the = gas is=20 ideal. In this case, the activity / fugacity will be the same as the = pressure=20 and you can use the standard ideal gas relation for the chemical = potential. So=20 at this level of approximation, no addition simulation is=20 necessary.
 
If you are dealing with adsorption under high = pressure,=20 low temperature conditions where the pressure of the gas deviates = significantly=20 > from the idea gas prediction, additional calculations will be required = to=20 calculate deviation from non-ideality. From these you can then = calculate=20 the fugacity and chemical potential. You would need a NPT MC or = MD=20 calculation to calculate the real gas density at the T and P of = interest, and=20 > from this data, calculate the fugacity and from that the chemical = potential.=20 This calculation would have to be repeated for each pressure of the = isotherm=20 because the deviation from ideality depends on the pressure and=20 temperature.
 
Hope this helps!
Saman 
 

From:=20 owner-chemistry+saman.alavi=3D=3Dnrc.ca*_*ccl.net=20 [owner-chemistry+saman.alavi=3D=3Dnrc.ca*_*ccl.net] On Behalf Of DIEGOI = GOMEZ=20 darkego21##yahoo.com [owner-chemistry*_*ccl.net]
Sent: = November 15,=20 2011 1:41 PM
To: Alavi, Saman
Subject: CCL: GCMC=20 isotherms

Hello...
 
I am new=20 in MC simulations, therefore any answer at any level is welcome!!
I want to=20 perform GCMC simulations to compute an adsorption isotherm of a gas in a = microporous material employing a particular force field (FF) derived = > from QM=20 calculations.
 
To perform=20 the simulations, I'm testing GULP and Towhee. (Any other suggestion for = an open=20 source software would be nice!)
 
With GULP=20 you can perform a GCMC simulation easily. However, you need a value for = the=20 chemical potential (at a given pressure) and here is my first = question.
 
i. =C2=BFHow to=20 obtain efficiently and accurately the chemical potential value for a = given=20 pressure to start the GCMC calculation?
 
In this regard, it is = possible to=20 obtain the chemical potential from a 'NPT' MC simulation that I could=20 perform in Towhee. = However I would=20 like to know if (and to skip the format of the FF for Towhee)  :=20
 
ii. =C2=BFIt is=20 possible to perform a 'NPT' MC simulation with GULP?
 
Any=20 manual, reference, comment or suggestion is welcome!!
 
Thanks in=20 advance for any reply!
 
Diego=20 G=C3=B3mez
     



= ------=_NextPart_000_0128_01CCA3EA.2E494410--