From jan.hrusak@jh-inst.cas.cz  Tue Jun 24 03:45:05 1997
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From: Jan Hrusak <jan.hrusak@jh-inst.cas.cz>
To: "'CHEMISTRY@www.ccl.net'" <CHEMISTRY@www.ccl.net>
Subject: Help with GAUSSIAN needed
Date: Tue, 24 Jun 1997 09:05:33 +-200
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Hi netters,

during the MP2 frequency calculation with the GAUSSIAN program I met the following message.

ANorm=     .1103152993D+01
 E2=        -.5957255286D+00 EUMP2=        -.15668679072567D+03
                   PickT4: no shell combinations can fit!
 NKLS2p=          18 NKLS2=          18 MaxCom=          11
 Error termination via Lnk1e in /usr/local/g94/l1111.exe.
 Job cpu time:  0 days  8 hours 18 minutes  1.8 seconds.

What does it mean and how to come around ?
The geometry optimization at the same level worked till the end.

Jan



From Craig.Wilson@bristol.ac.uk  Tue Jun 24 06:45:08 1997
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To: Jan Hrusak <jan.hrusak@jh-inst.cas.cz>
cc: CHEMISTRY@www.ccl.net
Subject: Re: CCL:G:Help with GAUSSIAN needed
In-Reply-To: <01BC807D.C7115340@pc8242.jh-inst.cas.cz>
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On Tue, 24 Jun 1997 09:05:33 +-200 Jan Hrusak 
<jan.hrusak@jh-inst.cas.cz> wrote:

> Hi netters,
> 
> during the MP2 frequency calculation with the GAUSSIAN program I met the following message.
> 
> ANorm=     .1103152993D+01
>  E2=        -.5957255286D+00 EUMP2=        -.15668679072567D+03
>                    PickT4: no shell combinations can fit!
>  NKLS2p=          18 NKLS2=          18 MaxCom=          11
>  Error termination via Lnk1e in /usr/local/g94/l1111.exe.
>  Job cpu time:  0 days  8 hours 18 minutes  1.8 seconds.
> 
> What does it mean and how to come around ?
> The geometry optimization at the same level worked till the end.
> 
> Jan

I have come across this problem myself, and I have also seen it posted 
to the list at least twice. On both occasions I have supplied an 
answer, and pointed out that I got that answer from help@gaussian.com.

Try both slightly increasing, and slightly decreasing the amount of 
memory the job uses. One of those should work.

Craig Wilson
------------------------------------------------------------------------
| Dr. Craig Wilson		  | 	    Craig.Wilson@bristol.ac.uk |
| School of Chemistry,            |				       |
| University of Bristol, BRISTOL, |  Tel: [+44] (0)117 928 9000 x 4711 |
| BS8 1TS, UK 		 	  |  Fax: [+44] (0)117 925 1295	       |
------------------------------------------------------------------------



From val@nmr1.ioc.ac.ru  Tue Jun 24 08:45:08 1997
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Date: Tue, 24 Jun 97 04:14:23 +0300
From: "Ananikov V.P." <val@nmr1.ioc.ac.ru>
Message-Id: <30564.val@nmr1.ioc.ac.ru>
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To: chemistry@www.ccl.net
Subject: TM oxidative addition/reductive elimination to the C-C bond



Dear All,

         I would like to know if anyone have an experience in reaction 
pathway calculations of Transition Metals insertion(oxidative addition) 
to the C-C bond and corresponding reverse process(reductive elimination) 
as well.  There are many examples of TM addition to H-H, C-H, Si-H bonds, 
but only a few references concerning C-C bond breaking/forming by TM 
complexes.  

Does ECP provide sufficient accuracy level for these calculations?
How important are electron correlation and relativistic effects on third 
row elements?

In case of insertion to the X-H bond the reactions were found to proceed 
through three-centered transition state, i.e.:

                                 X  - H
                                  \  /
                                   TM

Is it correct to guess the same transition state structure for insertion 
to the C-C bond?

your suggestions/references are welcome!

I will summarize.

thank you.

                                    sincerely yours,
                                    Valentin.


Valentin P. Ananikov
NMR Laboratory
N.D. Zelinsky Institute of Organic Chemistry
Leninsky Prospect 47
Moscow  117913
Russia
e-mail: val@nmr1.ioc.ac.ru
Fax     (095) 135 5328 
Phone   (095) 135 9094, (095) 938 3536


From s0rama02@homer.louisville.edu  Tue Jun 24 09:45:08 1997
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Date: Tue, 24 Jun 1997 09:11:26 -0400 (EDT)
From: Sriram Ramani <s0rama02@homer.louisville.edu>
To: CHEMISTRY@www.ccl.net
Subject: Forcefield query .
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Dear CCL members,

I am trying to model adsorption of gases on oxides, namely Al2O3, MnO2 and
La2O3, using the MSI/InsightII program & Sorption module. When I try to
assign charges and potentials to the unitcell of the oxides (constructed
from the Solids Builder asymmetric unit), I encounter problems, because no
suitable forcefields are available. An MSI support person suggested that I
use ESFF for oxides, but it did not work either. A literature search for
oxide forcefields turned up nothing.

Could anyone with experience in oxide forcefield modeling and/or MSI
modules offer some suggestions? Any pointers (adsorption set-up or
forcefield selection) would be greatly appreciated. Thanks.

Sincerely,
Sriram

^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^
                                 SRIRAM RAMANI

Chemical Engineering Department	    TEL: (502)852-1557 (W);(502)636-5293 (H)
University of Louisville	    WWW: http://www.louisville.edu/~s0rama02
Louisville, KY 40292                FAX: (502)852-6355

^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^


From CAVALLO@CHEMNA.DICHI.UNINA.IT  Tue Jun 24 11:45:10 1997
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 CHEMISTRY@www.ccl.net; Tue, 24 Jun 1997 16:21:47 +0100 (CET)
Date: Tue, 24 Jun 1997 16:21:20 +0100 (CET)
Subject: MD in vacuo vs. explicit solvent
To: CHEMISTRY@www.ccl.net
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Dear Netters,

I would like to receive informations on comparisons of MD simulations
in vacuo with simulations done by using explicit solvents. 
In particular, how compare in vacuo simulations with those performed
in CHCl3 ?

Any reference is appreciated.

Thanks,

Luigi

--------------------------------------------------------------------------------
| Dr. Luigi Cavallo                                                            |
| Department Of Chemistry              Fax   : ++39-81-5527771                 |
| University Of Naples                 Ph    : ++39-81-5476535                 |
| Via Mezzocannone 4                   Email : cavallo@chemna.dichi.unina.it   |
| I-80134 Naples, ITALY                                                        |
--------------------------------------------------------------------------------


From josema@mozart.us.es  Tue Jun 24 15:45:10 1997
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From: Jose Manuel Martinez Fernandez <josema@mozart.us.es>
Subject: FT of VACF
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Date: Tue, 24 Jun 1997 21:14:57 +0100 (WETDST)
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Dear Netters,

 I would appreciate any references to MD simulations of TIP4P water model
where the  Fourier Transform  of the center of mass velocity autocorrelation
function is performed.

Thanks in advance,

Jose Manuel







	    --------------------------------------------------------
	   |     Jose Manuel Martinez Fernandez, Ph.D. Student      |
	   | 	Dept. de Quimica Fisica, Universidad of Sevilla     |
	   | 	Facultad de Quimica, SEVILLA 41012, SPAIN           |
	   |     e-mail:  jmmartin@cica.es                          |
	   |              josema@mozart.us.es                       |
	    --------------------------------------------------------


From koike@hrlgw92.hrl.hitachi.co.jp  Tue Jun 24 20:45:12 1997
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Date: Wed, 25 Jun 1997 09:00:05 +0900
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From: koike@hrlgw92.hrl.hitachi.co.jp (Asako Koike)
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Dear all,

        I would like to know about 'NEWBAND1' developed by Hoffmann group,
which  does tight binding caluculations at the extended Huckel level. Is it
possible for me to get this program ?
         Thanks in advance to all responders.

                                                                       A. Koike
####################################################################
        Hitachi, Ltd.
        Hitachi Research Laboratory
        7-1-1, Omika-cho, Hitachi-shi,
        Ibaraki, 319-12, Japan
        Tel : +81 294 52 5111
        Fax : +81 294 52 7610
        E-mail : koike$B!w(Bhrl.hitachi.co.jp
####################################################################


From smori@utsc3.chem.s.u-tokyo.ac.jp  Tue Jun 24 20:51:56 1997
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To: chemistry@www.ccl.net
From: smori@utsc3.chem.s.u-tokyo.ac.jp (Seiji Mori)
Subject: Re: CCL:TM oxidative addition/reductive elimination to the C-C bond
Cc: <val@nmr1.ioc.ac.ru>



Dear Dr. Ananikov:

I have experiences of C-C bond forming process you said as to organocopper
case .

In the reductive elimination from Me3Cu(Me2O) and Me3Cu(H2O), Dorigo and
Schleyer
 (Angew. Chem. Int. Ed. Engl. 1995, 34, 476)
and Snyder (J. Am. Chem. Soc. 1995, 117, 11025)  show three-centered
transition state
using all-electron basis set and ECP, respectively.
Snyder's ECP results are good agreement with Dorigo's AE results.

We (Nakamura, Mori, Nakamura, Morokuma, JACS, 1997, 119, 4887 and
Nakamura, Mori, Morokuma, JACS, 1997, 119, 4900) also have shown that
in the case of organocopper reaction with acetylene and acrolein.
In the acetylene addition, the geometry using relavistic ECP using Dolg et
al. are found to be
essentially the same as that using AE. (As to second and third-row TM,
relavistic effects
are not small. See. Pyykko, Chem. Rev. 1988, 88, 563.)

  In the paper on the conjugate addition to acrolein, we showed TSs in the
oxidative addition
 and reductive elimination.
The oxidative addition TS can be viewed as three-centered.
Reductive elimination TS can be viewed as not only three-centered but also
four-centered.


I hope my comment is your help.
Sincerely yours,
 Seiji Mori


At 4:14 AM 97.6.24, Ananikov V.P. wrote:
> Dear All,
>
>          I would like to know if anyone have an experience in reaction
> pathway calculations of Transition Metals insertion(oxidative addition)
> to the C-C bond and corresponding reverse process(reductive elimination)
> as well.  There are many examples of TM addition to H-H, C-H, Si-H bonds,
> but only a few references concerning C-C bond breaking/forming by TM
> complexes.
>
> Does ECP provide sufficient accuracy level for these calculations?
> How important are electron correlation and relativistic effects on third
> row elements?
>
> In case of insertion to the X-H bond the reactions were found to proceed
> through three-centered transition state, i.e.:
>
>                                  X  - H
>                                   \  /
>                                    TM
>
> Is it correct to guess the same transition state structure for insertion
> to the C-C bond?
>

###################################################
~  Seiji Mori.(M.Sc.)
~
~  Graduate student
~  Lab. of Physical Organic Chemistry, Department of Chemistry
~  The University of Tokyo
~  Hongo 7-3-1, Bunkyo-ku, Tokyo 113, JAPAN.
~  email:smori@utsc3.chem.s.u-tokyo.ac.jp
~  TELE FAX$B!'!!!!(J+81-3-3812-8099
: -)  ---
~ http://www.chem.s.u-tokyo.ac.jp/Students/smori.html
####################################################



From Y0H8797@VMS1.TAMU.EDU  Tue Jun 24 22:45:17 1997
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Date: Tue, 24 Jun 1997 21:22:25 -0500
From: YONG HUANG <Y0H8797@ACS.TAMU.EDU>
To: CHEMISTRY@www.ccl.net
Message-Id: <970624212225.2034af4e@ACS.TAMU.EDU>
Subject: Definition of "thermochemical"


Can anybody explain what is "thermochemical"? What is the difference of it from
"thermodynamic"? Anywhere I can find official definitions? What is
thermochemical kinetics as in Prof. S. Benson's book "Thermochemical Kinetics:
Methods for the Estimation of Thermochemical Data and Rate Parameters"?

Thank you very much.

Yong

